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 PMBTA42DS
NPN/NPN high-voltage double transistors
Rev. 02 -- 27 August 2009 Product data sheet
1. Product profile
1.1 General description
NPN/NPN high-voltage double transistors in a small SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
1.2 Features
I High breakdown voltage I Two electrically isolated transistors I Small SMD plastic package
1.3 Applications
I Automotive: N High- and low-side switches N Voltage regulators I Communication: Telecom line interface I Consumer: CRT TV I Computing: Monitors
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM Quick reference data Parameter collector-emitter voltage collector current peak collector current single pulse; tp 1 ms Conditions open base Min Typ Max 300 100 200 Unit V mA mA
Per transistor
NXP Semiconductors
PMBTA42DS
NPN/NPN high-voltage double transistors
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR2 collector TR2 emitter TR2 base TR1 collector TR1
1 2 3
006aaa677
Simplified outline
6 5 4
Symbol
6 5 4
TR1
1
2
3
TR2
3. Ordering information
Table 3. Ordering information Package Name PMBTA42DS SC-74 Description plastic surface mounted package (TSOP6); 6 leads Version SOT457 Type number
4. Marking
Table 4. Marking codes Marking code P4 Type number PMBTA42DS
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IBM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation single pulse; tp 1 ms single pulse; tp 1 ms Tamb 25 C
[1] [2] [3]
Conditions open emitter open base open collector
Min -
Max 300 300 6 100 200 100 290 370 450
Unit V V V mA mA mA mW mW mW
Per transistor
PMBTA42DS_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 27 August 2009
2 of 10
NXP Semiconductors
PMBTA42DS
NPN/NPN high-voltage double transistors
Table 5. Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device Ptot total power dissipation Tamb 25 C
[1] [2] [3]
Parameter
Conditions
Min -65 -65
Max 420 560 700 150 +150 +150
Unit mW mW mW C C C
Tj Tamb Tstg
[1] [2] [3]
junction temperature ambient temperature storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint.
6. Thermal characteristics
Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1] [2] [3]
Min -
Typ -
Max 431 338 278 105
Unit K/W K/W K/W K/W
Per transistor
Rth(j-sp) Per device Rth(j-a)
thermal resistance from junction to solder point thermal resistance from junction to ambient in free air
[1] [2] [3]
-
-
298 223 179
K/W K/W K/W
[1] [2] [3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint.
PMBTA42DS_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 27 August 2009
3 of 10
NXP Semiconductors
PMBTA42DS
NPN/NPN high-voltage double transistors
7. Characteristics
Table 7. Characteristics Tamb = 25 C unless otherwise specified Symbol ICBO IEBO hFE Parameter collector-base cut-off current emitter-base cut-off current DC current gain Conditions VCB = 200 V; IE = 0 A VEB = 6 V; IC = 0 A VCE = 10 V; IC = 1 mA VCE = 10 V; IC = 10 mA VCE = 10 V; IC = 30 mA VCEsat VBEsat Cre fT collector-emitter IC = 20 mA; IB = 2 mA saturation voltage base-emitter IC = 20 mA; IB = 2 mA saturation voltage feedback capacitance transition frequency VCB = 20 V; IC = ic = 0 A; f = 1 MHz VCE = 20 V; IC = 10 mA; f = 100 MHz Min 25 40 40 50 Typ Max 100 100 500 900 3 mV mV pF MHz Unit nA nA Per transistor
200 IC (mA) 150
006aaa688
IB (mA) = 30 27 24 21 18 15 12 9 6
300
mld391
hFE
(1)
200
100
(2)
3 100 50
(3)
0 0 2 4 6 8 10 VCE (V)
0 10-1
1
10 IC (mA)
102
Tamb = 25 C
VCE = 10 V (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 1.
Collector current as a function of collector-emitter voltage; typical values
Fig 2.
DC current gain as a function of collector current; typical values
PMBTA42DS_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 27 August 2009
4 of 10
NXP Semiconductors
PMBTA42DS
NPN/NPN high-voltage double transistors
1000 VBE (mV) 800
(2)
mld393
1000 VBEsat (mV) 800
(2)
mld394
(1)
(1)
600 600 400
(3)
(3)
400 200
0 10-1
1
10 IC (mA)
102
200 10-1
1
10 IC (mA)
102
VCE = 10 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 150 C
IC/IB = 10 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 150 C
Fig 3.
Base-emitter voltage as a function of collector current; typical values
103
Fig 4.
Base-emitter saturation voltage as a function of collector current, typical values
mld395
VCEsat (mV)
(1)
102
(2) (3)
10 10-1
1
10 IC (mA)
102
IC/IB = 10 (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 5.
Collector-emitter saturation voltage as a function of collector current; typical values
PMBTA42DS_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 27 August 2009
5 of 10
NXP Semiconductors
PMBTA42DS
NPN/NPN high-voltage double transistors
8. Package outline
3.1 2.7 6 5 4 0.6 0.2 1.1 0.9
3.0 2.5
1.7 1.3
pin 1 index
1 0.95 1.9 Dimensions in mm
2
3 0.40 0.25 0.26 0.10 04-11-08
Fig 6.
Package outline SOT457 (SC-74)
9. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PMBTA42DS Package SOT457 Description 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2
[1] [2] [3]
[2] [3]
Packing quantity 3000 -115 -125 10000 -135 -165
For further information and the availability of packing methods, see Section 13. T1: normal taping T2: reverse taping
PMBTA42DS_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 27 August 2009
6 of 10
NXP Semiconductors
PMBTA42DS
NPN/NPN high-voltage double transistors
10. Soldering
3.45 1.95
solder lands 0.95 3.30 2.825 0.45 0.55 occupied area solder paste solder resist
1.60 1.70 3.10 3.20
msc422
Dimensions in mm
Fig 7.
Reflow soldering footprint SOT457 (SC-74)
5.30
solder lands 5.05 0.45 1.45 4.45 solder resist occupied area
1.40 4.30
msc423
Dimensions in mm
Fig 8.
Wave soldering footprint SOT457 (SC-74)
PMBTA42DS_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 27 August 2009
7 of 10
NXP Semiconductors
PMBTA42DS
NPN/NPN high-voltage double transistors
11. Revision history
Table 9. Revision history Release date 20090827 Data sheet status Product data sheet Change notice Supersedes PMBTA42DS_1 Document ID PMBTA42DS_2 Modifications:
* *
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Figure 8 "Wave soldering footprint SOT457 (SC-74)":updated Product data sheet -
PMBTA42DS_1
20060106
PMBTA42DS_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 27 August 2009
8 of 10
NXP Semiconductors
PMBTA42DS
NPN/NPN high-voltage double transistors
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PMBTA42DS_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 27 August 2009
9 of 10
NXP Semiconductors
PMBTA42DS
NPN/NPN high-voltage double transistors
14. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 Packing information. . . . . . . . . . . . . . . . . . . . . . 6 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 August 2009 Document identifier: PMBTA42DS_2


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